ROSE/TN/96-1RD48 Technical Reports |
What are ROSE Technical Notes ?
The ROSE Technical Notes are on the one hand thought to be:
1) a platform for exchange of technical information within the collaboration, and on the
other hand
2) a forum for making available RD48 related papers prior to publication (preprints)
How to cite ROSE Technical Notes ?
In case
1) I would suggest to cite them just as ROSE/TN/xx-xx on http://cern.ch/rd48
and in case
2) as follows:
Author X, Author Y, Paper submitted to XXXX (or paper presented on Conference XXXX);
preprint available as ROSE/TN/xx-xx on http://cern.ch/rd48.
Michael
ROSE/TN/96-1
POSTSCRIPT FILE : rosetn961.ps
"Defect Evolution in Silicon Detector Material", Conference on Radiation Effects
in Semiconductor Materials. Firenze, March 1996. B MacEvoy, Imperial College, London.
ROSE/TN/96-2
POSTSCRIPT FILE : rosetn962.ps
"A New Model for Generation-Recombination in Silicon Depletion Regions after Neutron
Irradiation" S J Watts, I H Hopkins-Bond, A Holmes-Siedle, A Mohammedzadeh, R Pace.
ROSE/TN/96-3
POSTSCRIPT FILE : rosetn963.ps
"Comparison of defects produced by fast neutrons and Cobalt-60 gammas in high
resistivity silicon detectors using deep level transient spectroscopy" M Moll, H
Feick, E Fretwurst, G Lindstroem, C Schutze.
ROSE/TN/96-4
POSTSCRIPT FILE : rosetn964.ps
"Analysis od TSC spectra measured on silicon pad detectors after exposure to fast
neutrons"H Feick, E Fretwurst, P Heydarpoor, G Lindstroem, M Moll,.
ROSE/TN/96-5
POSTSCRIPT FILE : rosetn965.ps
"Investigation of damage induced defects in silicon by TCT" E Fretwurst, V
Eremin, H Feick, J Gerhardt, G Lindstroem.
ROSE/TN/96-6
POSTSCRIPT FILE : rosetn966.ps
"Correlation of Radiation Damage Effects in High Resistivity Silicon Detectors with
Results from Deep Level Spectroscopy" H Feick, E Fretwurst, G Lindstroem and M Moll.
ROSE/TN/97-1
POSTSCRIPT FILE : rosetn971.ps
"Detectors for the study of the Proton-Proton Interaction at very high energies:
Summary of thesis, A. Vasilescu
POSTSCRIPT FILE : rosetn972.ps POSTSCRIPT FILE : rosetn973.ps PSROSE/TN/97-2
(revised version 12/99)
"The NIEL scaling hypothesis applied to neutron spectra of irradiation facilities in
the ATLAS and CMS SCT" A. Vasilescu
ROSE/TN/97-3
"Overview of the radiation environment in ATLAS and CMS SCT and the irradiation
facilities used for damage tests : excerpt from thesis, A. Vasilescu
ROSE/TN/97-4
FILE : text rosetn974a.ps figures rosetn974b.ps
PDF FILE: text rosetn974a.pdf figures rosetn974b.pdf
"Dependance of Depletion Voltage and Capacitance on Temperature and Frequency in
Heavily Irradiated Silicon Diodes" L Beattie, A Chilingarov, P Ratoff, T Sloan.
Lancaster University. UK.
ROSE/TN/98-1
POSTSCRIPT FILE : rosetn981.ps
"Forward Bias I-V Characteristics for Heavily irradiated Silicon Diodes" L
Beattie, A Chilingarov, T Sloan, Lancaster University, UK.
ROSE/TN/98-2
POSTSCRIPT FILE : rosetn982.ps
"Irradiated silicon detectors - a relaxation semiconductor analysis" B K Jones,
M McPherson, J Santana, Lancaster University, UK.
ROSE/TN/99-1
POSTSCRIPT FILE : rosetn991.ps
figures rosetn991a.ps, rosetn991b.ps,
rosetn991c.ps
"Introduction of high oxygen concentrations into silicon wafers by high temperature
diffusion" G Casse, University of Liverpool, UK.
ROSE/TN/99-2
POSTSCRIPT FILE : rosetn992.ps
"Synchrotron X-Ray Topography (SXRT) Studies of Silicon Wafers & MESA
Diodes" Dr. Patrick J. McNally, MRL, Dublin City University, Ireland.
ROSE/TN/99-3
POSTSCRIPT FILE : rosetn993.ps
"TOSCA simulation of some effects observed in irradiated silicon detectors"
Szymon Moszczynski , Institute of Nuclear Physics, Cracow,Poland.
ROSE/TN/99-4
POSTSCRIPT FILE : rosetn994.ps
"The radiation hardness of high resistivity neutron transmutation doping
silicon" P. Litovchenko et al. , Kiev.
ROSE/TN/99-5
POSTSCRIPT FILE : rosetn995.ps
"Radiation effects in silicon detectors processed on carbon and oxygen rich
substrates" A. Ruzin et al. ,Switzerland.
ROSE/TN/99-6
POSTSCRIPT FILE : rosetn996.ps
"Gate Controlled Diodes for Characterization of the Si-SiO2 Interface with Respect to
Surface Effects of Silicon Detectors" C. Becker et al. , Dortmund University, Germany
ROSE/TN/2000-01
PDF FILE : rosetn00-01.pdf
"Silicon wafer oxygenation from SiO2 layers for
radiation hard detectors"
L. Fonseca, M. Lozano, F. Campabadal, C. Martínez, M. Ullán, B. S. Avset, A.
Ruzin, F. Lemeilleur, E. Nossarzewska-Orlowska (CNM, Sintef, CERN, ITME)
ROSE/TN/2000-02
PS FILE : rosetn00-02.ps
"Notes on the fluence normalisation based on the NIEL scaling hypothesis"
Angela Vasilescu (Bucharest) and Gunnar Lindstroem (Hamburg University)
ROSE/TN/2000-03
(Nucl. Instr. & Meth. in Phys. Res. A 466 (2001)
308-326 (NIMA electronic
version),
presented on the Hiroshima conference)
(Text): rosetn00-03b-paper.ps(727kB) zipped(108kB)PS FILE
PS FILE (Figures): rosetn00-03b-figures.ps(10595kB) zipped(1191kB)
PS FILE (Tables): rosetn00-03b-tables.ps(43kB)
PDF FILE (Text): rosetn00-03b-paper.pdf 90 KB
PDF FILE (Figures): rosetn00-03b-figures.pdf 856 KB
PDF FILE (Tables): rosetn00-03b-tables.pdf 7 KB
Changes with respect to last version: changes.ps(293kB) zipped(46kB)
The previous versions can be found here.
"Radiation Hard Silicon Detectors- Developments by the RD48 (ROSE) Collaboration -"
The RD48 Collaboration (G.Lindstroem et al.).
ROSE/TN/2000-0
DF FILE : rosetn00-04.pdf (250 kB)P
"Microscopic studies on various silicon materials irradiated with different high energetic particles"
M.Kuhnke, E.Fretwurst and G.Lindstroem (Universitaet Hamburg)
ROSE/TN/2000-0
PS FILE : rosetn00-05.ps (2175 kB) gz-file: rosetn00-05.ps.gz (939KB)
"Influence of Surface Damage on Highly Segmented Silicon Detectors"
C.Goessling, M.Peters, J.Wuestenfeld, R.Wunstorf (University of Dortmund)
ROSE/TN/2000-0
PS FILE : rosetn00-06.ps (4822KB) zipped: rosetn00-06.zip (382KB)
"Developments for Radiation Hard Silicon Detectors by Defect Engineering
- Results by the CERN RD48 (ROSE) Collaboration -"
The RD48 Collaboration (G.Lindstroem et al.).
ROSE/TN/2000-0
PS FILE : rosetn00-07.ps (198 KB)
"Observation of an energy dependence of the radiation damage on standard and oxygenated silicon diodes by 16,21, and 27 MeV protons."
J.Wyss (INFN Sezione di Pisa), D.Bisello, A.Candlori, A.Kaminsky, D.Pantano (INFN Sezione die Padova).
ROSE/TN/2000-0
PDF FILE: rosetn00-08.pdf (247 KB)
"Radiation damage of standard and oxygenated diodes by 16 MeV and 27 MeV protons" by D.Bisello, J. Wyss, A. Candelori, A. Kaminsky and D. Pantano. presented at the Nuclear Science Symposium and Medical Imaging Conference in Lion (October 15-20, 2000)
ROSE/TN/2000-0
Text: word-format ps-format pdf-format
ROSE/TN/2000-10
(VERSION 1/14.12.2000) now superseded by
ROSE/TN/2002-02!
outdated: Word file (28KB) -- PS file (7KB) --- PDF file (58KB)==> take a look at ROSE/TN/2002-02
"Recommendations for the corrections of the depletion voltage values extracted from the C-V measurements "
Alexander Chilingarov (Lancaster University)
ROSE/TN/2001-01
PDF file (265KB)
"Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions "
G.Kramberger, V.Cindro, I.Mandic, M.Mikuz, M.Zavrtanik
(Jozef Stefan Institute and Department of Physics, University of Ljubljana)
ROSE/TN/2001-02
PS file (1178 KB)
"Simulation of non-ionising energy loss and defect formation in silicon"
Mika Huhtinen (CERN, Switzerland), to be published in NIMA
ROSE/TN/2001-03
PDF file (98 KB)
"NEW RESULTS FOR A NOVEL OXYGENATED SILICON MATERIAL "
C. Da Via’and S. J. Watts (Department of Electronic and Computer Engineering, Brunel University, Uxbridge, UB8 3PH, UK), accepted for publication in NIMB.
ROSE/TN/2001-04 (published
in NIMB Vol 186/1-4, pp 100-110)
Text: PDF file (39 KB) Figures/Tables: PDF file (211 KB)
"Relation between microscopic defects and macroscopic changes in silicon detector properties after hadron irradiation"
M.Moll (CERN), E.Fretwurst, G.Lindström (Institut für Experimentalphysik, Universität Hamburg,Germany),M.Kuhnke (Brunel University, Uxbridge, United Kingdom,) accepted for publication in NIMB.
ROSE/TN/2001-05 (published in NIMB vol.186 (1-4) pp.144-151)
PS file (117 KB) pdf-file
"Defect generation in crystalline silicon irradiated with high energy particles"
M.Kuhnke (Brunel University, Uxbridge, United Kingdom,), E.Fretwurst, G.Lindström (Institut für Experimentalphysik, Universität Hamburg,Germany),accepted for publication in NIMB.
ROSE/TN/2002-01 (published in NIMA
485 (2002) 140-145)
PS file pdf-file
"The annealing of interstitial carbon atoms in high resistivity n-type silicon after proton irradiation"
M.Kuhnke (Brunel University, Uxbridge, United Kingdom,), E.Fretwurst, G.Lindström (Institut für Experimentalphysik, Universität Hamburg,Germany)
ROSE/TN/2002-02 (supersedes ROSE/TN/2000-10)
(published in an abriged form in NIMA
492 (2002) 402-410)
"Study of the frequency and temperature dependence of the depletion voltage from CV measurements for irradiated Si detectors"
D.Campbell, A.Chilingarov, T.Sloan
Department of Physics, Lancaster University, Lancaster LA1 4YB, UK
ROSE/TN/2002-03 (published in
IEEE Trans. Nucl. Sci. 49 (5), pp.1-6, October 2002)
"The Long-Term Annealing of the Cluster Damage in High Resistivity n-Type Silicon"
Martin Kuhnke
M.Kuhnke (Brunel University, Uxbridge, United Kingdom)
ROSE/TN/2003-01
"Microscopic and Electrical Properties of Clustered Divacancies in n-Type Silicon"
Martin Kuhnke
M.Kuhnke (Brunel University, Uxbridge, United Kingdom)